发明名称 Microelectromechanical resonators with passive frequency tuning using built-in piezoelectric-based varactors
摘要 Microelectromechanical resonators include a resonator body with a built-in piezoelectric-based varactor diode. This built-in varactor diode supports passive frequency tuning by enabling low-power manipulation of the stiffness of a piezoelectric layer, in response to controlling charge build-up therein at resonance. A resonator may include a composite stack of a bottom electrode, a piezoelectric layer on the bottom electrode and at least one top electrode on the piezoelectric layer. The piezoelectric layer includes a built-in varactor diode, which is defined by at least two regions having different concentrations of electrically active dopants therein.
申请公布号 US8575819(B1) 申请公布日期 2013.11.05
申请号 US201113184970 申请日期 2011.07.18
申请人 BHUGRA HARMEET;SAMARAO ASHWIN;INTEGRATED DEVICE TECHNOLOGY, INC. 发明人 BHUGRA HARMEET;SAMARAO ASHWIN
分类号 H01L41/107;H01L41/09;H03H9/00;H03L1/00;H03L7/00 主分类号 H01L41/107
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