发明名称 |
Microelectromechanical resonators with passive frequency tuning using built-in piezoelectric-based varactors |
摘要 |
Microelectromechanical resonators include a resonator body with a built-in piezoelectric-based varactor diode. This built-in varactor diode supports passive frequency tuning by enabling low-power manipulation of the stiffness of a piezoelectric layer, in response to controlling charge build-up therein at resonance. A resonator may include a composite stack of a bottom electrode, a piezoelectric layer on the bottom electrode and at least one top electrode on the piezoelectric layer. The piezoelectric layer includes a built-in varactor diode, which is defined by at least two regions having different concentrations of electrically active dopants therein. |
申请公布号 |
US8575819(B1) |
申请公布日期 |
2013.11.05 |
申请号 |
US201113184970 |
申请日期 |
2011.07.18 |
申请人 |
BHUGRA HARMEET;SAMARAO ASHWIN;INTEGRATED DEVICE TECHNOLOGY, INC. |
发明人 |
BHUGRA HARMEET;SAMARAO ASHWIN |
分类号 |
H01L41/107;H01L41/09;H03H9/00;H03L1/00;H03L7/00 |
主分类号 |
H01L41/107 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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