发明名称 Direct contact flip chip package with power transistors
摘要 Some exemplary embodiments of an advanced direct contact leadless package and related structure and method, especially suitable for packaging high current semiconductor devices, have been disclosed. One exemplary structure comprises a mold compound enclosing a first contact lead frame portion, a paddle portion, and an extended contact lead frame portion held together by a mold compound. A first semiconductor device is attached on top of the lead frame portions as a flip chip, while a second semiconductor device is attached to a bottom side of said paddle portion and is in electrical contact with said the first semiconductor device. The extended contact lead frame portion is in direct electrical contact with the second semiconductor device without using a bond wire. Alternative exemplary embodiments may include additional extended lead frame portions, paddle portions, and semiconductor devices in various configurations.
申请公布号 US8575736(B2) 申请公布日期 2013.11.05
申请号 US201213345395 申请日期 2012.01.06
申请人 CHO EUNG SAN;INTERNATIONAL RECTIFIER CORPORATION 发明人 CHO EUNG SAN
分类号 H01L23/495;H01L23/34 主分类号 H01L23/495
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