发明名称 |
Punch-through diode steering element |
摘要 |
A storage system and method for forming a storage system that uses punch-through diodes as a steering element in series with a reversible resistivity-switching element is described. The punch-through diode allows bipolar operation of a cross-point memory array. The punch-through diode may have a symmetrical non-linear current/voltage relationship. The punch-through diode has a high current at high bias for selected cells and a low leakage current at low bias for unselected cells. Therefore, it is compatible with bipolar switching in cross-point memory arrays having resistive switching elements. The punch-through diode may be a N+/P-/N+ device or a P+/N-/P+ device.
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申请公布号 |
US8575715(B2) |
申请公布日期 |
2013.11.05 |
申请号 |
US201213571100 |
申请日期 |
2012.08.09 |
申请人 |
MIHNEA ANDREI;SEKAR DEEPAK C.;SAMACHISA GEORGE;SCHEUERLEIN ROY;XIAO LI;SANDISK 3D LLC |
发明人 |
MIHNEA ANDREI;SEKAR DEEPAK C.;SAMACHISA GEORGE;SCHEUERLEIN ROY;XIAO LI |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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