发明名称 |
Asymmetric MIM capacitor for DRAM devices |
摘要 |
A bilayer second electrode for a MIM DRAM capacitor is formed wherein the layer of the electrode that is in contact with the dielectric layer (i.e. bottom layer) has a composition that is resistant to oxidation during subsequent anneal steps and have rutile templating capability. Examples include SnO2 and RuO2. The capacitor stack including the bottom layer is subjected to a PMA treatment to reduce the oxygen vacancies in the dielectric layer and reduce the interface states at the dielectric/second electrode interface. The other component of the bilayer (i.e. top layer) is a high work function, high conductivity metal or conductive metal compound.
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申请公布号 |
US8575671(B2) |
申请公布日期 |
2013.11.05 |
申请号 |
US201213692460 |
申请日期 |
2012.12.03 |
申请人 |
INTERMOLECULAR, INC.;ELPIDA MEMORY, INC. |
发明人 |
CHEN HANHONG;ODE HIROYUKI |
分类号 |
H01L27/108;H01L29/94 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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