发明名称 |
Method of forming strained semiconductor channel and semiconductor device |
摘要 |
A method of forming a strained semiconductor channel, comprising: forming a relaxed SiGe layer on a semiconductor substrate; forming a dielectric layer on the relaxed SiGe layer and forming a sacrificial gate on the dielectric layer, wherein the dielectric layer and the sacrificial gate form a sacrificial gate structure; depositing an interlayer dielectric layer, which is planarized to expose the sacrificial gate; etching to remove the sacrificial gate and the dielectric layer to form an opening; forming a semiconductor epitaxial layer by selective semiconductor epitaxial growth in the opening; depositing a high-K dielectric layer and a metal layer; and removing the high-K dielectric layer and metal layer covering the interlayer dielectric layer by planarizing the deposited metal layer and high-K dielectric layer to form a metal gate. A semiconductor device manufactured by this process is also provided.
|
申请公布号 |
US8575654(B2) |
申请公布日期 |
2013.11.05 |
申请号 |
US201013059285 |
申请日期 |
2010.09.19 |
申请人 |
YIN HAIZHOU;ZHU HUILONG;LUO ZHIJIONG;INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OFSCIENCES |
发明人 |
YIN HAIZHOU;ZHU HUILONG;LUO ZHIJIONG |
分类号 |
H01L29/78;H01L21/20 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|