| 摘要 |
The present invention relates to a plasma processing apparatus comprising: a processing chamber having a cylindrical shape of which the upper part is open to perform a plasma process; a substitute supporting unit, prepared in the processing chamber, for settling a substrate, which is an object for the plasma process; a ceramic plate, prepared on the upper part of the processing chamber, for sealing an inner space of the processing chamber; and a complex inductively coupled coil, arranged on an upper part of the ceramic plate, for generating plasma in the inner space of the processing chamber; wherein the complex inductively coupled coil comprises an inner coil, settled in a central part of the ceramic plate, and an external coil having a cylindrical shape, settled in the ceramic plate, in order for the inner coil to be arranged in the internal periphery. Therefore, by using the present invention, a stable plasma source is possibly realized while increasing overall plasma density and maintaining uniformity. |
