发明名称 Implementing eDRAM stacked FET structure
摘要 A method and circuit for implementing an embedded dynamic random access memory (eDRAM), and a design structure on which the subject circuit resides are provided. The embedded dynamic random access memory (eDRAM) circuit includes a stacked field effect transistor (FET) and capacitor. The capacitor is fabricated directly on top of the FET to build the eDRAM.
申请公布号 US8574982(B2) 申请公布日期 2013.11.05
申请号 US20100712521 申请日期 2010.02.25
申请人 ERICKSON KARL ROBERT;PAULSEN DAVID PAUL;SHEETS, II JOHN EDWARD;WILLIAMS KELLY L.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ERICKSON KARL ROBERT;PAULSEN DAVID PAUL;SHEETS, II JOHN EDWARD;WILLIAMS KELLY L.
分类号 H01L21/8249 主分类号 H01L21/8249
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