发明名称 |
Implementing eDRAM stacked FET structure |
摘要 |
A method and circuit for implementing an embedded dynamic random access memory (eDRAM), and a design structure on which the subject circuit resides are provided. The embedded dynamic random access memory (eDRAM) circuit includes a stacked field effect transistor (FET) and capacitor. The capacitor is fabricated directly on top of the FET to build the eDRAM.
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申请公布号 |
US8574982(B2) |
申请公布日期 |
2013.11.05 |
申请号 |
US20100712521 |
申请日期 |
2010.02.25 |
申请人 |
ERICKSON KARL ROBERT;PAULSEN DAVID PAUL;SHEETS, II JOHN EDWARD;WILLIAMS KELLY L.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ERICKSON KARL ROBERT;PAULSEN DAVID PAUL;SHEETS, II JOHN EDWARD;WILLIAMS KELLY L. |
分类号 |
H01L21/8249 |
主分类号 |
H01L21/8249 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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