| 摘要 |
<p>Described are a semiconductor device with five gate stacks on the different regions of a semiconductor substrate and a manufacturing method thereof. The semiconductor device includes a semiconductor substrate and a dividing feature to divide the semiconductor substrate into different regions. The different regions are a pFET core region, a pFET IO region, an nFET core region, an nFET IO region, and a high resistive region. [Reference numerals] (102) Provide a semiconductor substrate;(104) Form a dielectric layer;(106) Form an interface layer on the substrate and the dielectric layer;(108) Deposit a HK dielectric layer on the interface layer;(110) Deposit a first capping layer on the HK dielectric layer;(112) Deposit a second capping layer on the HK dielectric layer and the first capping layer;(114) Deposit a WF metal layer on the second capping layer and deposit a poly silicon layer on the WF metal layer;(116) Form a gate stack</p> |
