发明名称 NONVOLATILE MEMORY DEVICE AND PROGRAM OPERATION METHOD THEREOF
摘要 <p>The present invention relates to a nonvolatile memory device and an operating method thereof. The method for operating the nonvolatile memory device which includes a cell string which is vertically formed on a substrate and selects memory cells with a string selection line unit according to the embodiment of the present invention comprises the steps of: determining an order to program the selected page among pages which share the same word line; determining the level of a voltage which is supplied to the selected page according to the order to program the selected page; and writing data on the selected page by using a voltage with the determined voltage level. A reading failure is prevented due to the reduction of a reading margin by the operation method according to the embodiment of the present invention.</p>
申请公布号 KR20130120757(A) 申请公布日期 2013.11.05
申请号 KR20120043887 申请日期 2012.04.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KWAK, DONG HUN
分类号 G11C16/34;G11C16/10 主分类号 G11C16/34
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