| 摘要 |
PURPOSE: A thin film transistor having an active layer consisting of indium containing silicon and germanium and a display device having the same are provided to secure an active layer having high electrical characteristic. CONSTITUTION: A gate insulating layer(120) is formed on a substrate. An active layer(130) includes a channel region. The active layer is made of a material of In, Si, Ge, and O composition. A source electrode(140) is separated from a drain electrode(150) on the gate insulating layer. The source electrode and the drain electrode are electrically connected to the active layer. |
