发明名称 |
Carbosilane precursors for low temperature film deposition |
摘要 |
Provided are processes for the low temperature deposition of silicon-containing films using carbosilane precursors containing a carbon atom bridging at least two silicon atoms. Certain methods comprise providing a substrate; in a PECVD process, exposing the substrate surface to a carbosilane precursor containing at least one carbon atom bridging at least two silicon atoms; exposing the carbosilane precursor to a low-powered energy sourcedirect plasma to provide a carbosilane at the substrate surface; and densifying the carbosilanestripping away at least some of the hydrogen atoms to provide a film comprising SiC. The SiC film may be exposed to the carbosilane surface to a nitrogen source to provide a film comprising SiCN.
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申请公布号 |
US8575033(B2) |
申请公布日期 |
2013.11.05 |
申请号 |
US201213609867 |
申请日期 |
2012.09.11 |
申请人 |
WELDMAN TIMOTHY W.;SCHROEDER TODD;APPLIED MATERIALS, INC. |
发明人 |
WELDMAN TIMOTHY W.;SCHROEDER TODD |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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