发明名称 |
Leakage reduction in DRAM MIM capacitors |
摘要 |
A method for reducing the leakage current in DRAM MIM capacitors comprises forming a multi-layer dielectric stack from an amorphous highly doped material, an amorphous high band gap material, and a lightly or non-doped material. The highly doped material will remain amorphous (<30% crystalline) after an anneal step. The high band gap material will remain amorphous (<30% crystalline) after an anneal step. The lightly or non-doped material will become crystalline (>=30% crystalline) after an anneal step. The high band gap material is formed between the amorphous highly doped material and the lightly or non-doped material and provides an intermediate barrier to conduction through the multi-layer dielectric stack.
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申请公布号 |
US8574998(B2) |
申请公布日期 |
2013.11.05 |
申请号 |
US201113311368 |
申请日期 |
2011.12.05 |
申请人 |
MALHOTRA SANDRA;KOYANAGI KENICHI;ODE HIROYUKI;RUI XIANGXIN;ARAO TAKASHI;FUJIWARA NAONORI;INTERMOLECULAR, INC.;ELPIDA MEMORY, INC. |
发明人 |
MALHOTRA SANDRA;KOYANAGI KENICHI;ODE HIROYUKI;RUI XIANGXIN;ARAO TAKASHI;FUJIWARA NAONORI |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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地址 |
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