发明名称 |
Silicon carbide crystal and method of manufacturing silicon carbide crystal |
摘要 |
An SiC crystal has Fe concentration not higher than 0.1 ppm and Al concentration not higher than 100 ppm. A method of manufacturing an SiC crystal includes the following steps. SiC powders for polishing are prepared as a first source material. A first SiC crystal is grown by sublimating the first source material through heating and precipitating an SiC crystal. A second source material is formed by crushing the first SiC crystal. A second SiC crystal is grown by sublimating the second source material through heating and precipitating an SiC crystal. Thus, an SiC crystal and a method of manufacturing an SiC crystal capable of achieving suppressed lowering in quality can be obtained.
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申请公布号 |
US8574529(B2) |
申请公布日期 |
2013.11.05 |
申请号 |
US201113499482 |
申请日期 |
2011.02.25 |
申请人 |
SASAKI MAKOTO;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
SASAKI MAKOTO |
分类号 |
C01B31/36;B32B3/02;B32B5/16;B32B9/04;C30B23/00;H01L29/06 |
主分类号 |
C01B31/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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