发明名称 Solid-state imaging device with pixels having photodiodes with different exposure times, signal processing method of solid-state imaging device, and electronic apparatus
摘要 A solid-state imaging device includes a pixel array section and a signal processing section. The pixel array section is configured to include a plurality of arranged rectangular pixels, each of which has different sizes in the vertical and horizontal directions, and a plurality of adjacent ones of which are combined to form a square pixel having the same size in the vertical and horizontal directions. The signal processing section is configured to perform a process of outputting, as a single signal, a plurality of signals read out from the combined plurality of rectangular pixels.
申请公布号 US8576299(B2) 申请公布日期 2013.11.05
申请号 US20100731402 申请日期 2010.03.25
申请人 MABUCHI KEIJI;SONY CORPORATION 发明人 MABUCHI KEIJI
分类号 H04N5/235;H01L27/146;H04N3/14;H04N5/335;H04N5/355;H04N5/369;H04N5/374;H04N5/378 主分类号 H04N5/235
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