| 发明名称 |
Method for fabricating semiconductor device and plasma doping apparatus |
| 摘要 |
After a fin-semiconductor region (13) is formed on a substrate (11), impurity-containing gas and oxygen-containing gas are used to perform plasma doping on the fin-semiconductor region (13). This forms impurity-doped region (17) in at least side portions of the fin-semiconductor region (13). |
| 申请公布号 |
US8574972(B2) |
申请公布日期 |
2013.11.05 |
| 申请号 |
US201013264660 |
申请日期 |
2010.10.28 |
| 申请人 |
SASAKI YUICHIRO;KUBOTA MASAFUMI;HAYASHI SHIGENORI;PANASONIC CORPORATION |
发明人 |
SASAKI YUICHIRO;KUBOTA MASAFUMI;HAYASHI SHIGENORI |
| 分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
