| 摘要 |
PURPOSE: A memory device and a voltage setting method thereof are provided to constantly maintain a voltage level difference between each voltage by changing a voltage level of a reference voltage. CONSTITUTION: A memory device (MDEV) includes a memory cell array (MCA) and a test voltage setting unit (TSVU). The memory cell array includes memory cells which stores data in a latch. The test voltage setting unit includes a first voltage generator (VGEN1) generating a first voltage, a second voltage generator (VGEN2) generating a second voltage, and a third voltage generator (VGEN3) generating a third voltage in order to test noise margin of the memory cells in a test mode. [Reference numerals] (MCA) Memory cell array; (VGEN1) First voltage generator; (VGEN2) Second voltage generator; (VGEN3) Third voltage generator |
