发明名称 Organic Thin Film Transistor Having DLC Layer And Method For Manufacturing The Same
摘要 PURPOSE: An organic thin film transistor with a diamond like carbon layer and a manufacturing method thereof are provided to secure stability by minimizing damage to organic materials. CONSTITUTION: A DLC(Diamond Like Carbon) layer(4) includes fluorine. An organic semiconductor layer(7) is formed on the DLC layer. The organic semiconductor layer includes a channel region, a source region, and a drain region. A source electrode(6) is contacted with the source region. A drain electrode(5) is contacted with the drain region.
申请公布号 KR101325452(B1) 申请公布日期 2013.11.04
申请号 KR20110115464 申请日期 2011.11.08
申请人 发明人
分类号 H01L51/05;H01L51/30;H01L51/40 主分类号 H01L51/05
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