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发明名称
半导体记忆装置
摘要
一种半导体记忆装置,将两个A埠用传输电晶体彼此邻接地配置于位元格的一端,并且将两个B埠用传输电晶体彼此邻接地配置于位元格的另一端,藉由使这些A埠用传输电晶体共同拥有闸极电极来使A埠用位元线彼此邻接地配置,藉由使这些B埠用传输电晶体共同拥有闸极电极来使B埠用位元线彼此邻接地配置。
申请公布号
TWI414057
申请公布日期
2013.11.01
申请号
TW098113001
申请日期
2009.04.20
申请人
东芝股份有限公司 日本
发明人
小内俊之;田中豊
分类号
H01L27/11;G11C11/41
主分类号
H01L27/11
代理机构
代理人
詹铭文 台北市中正区罗斯福路2段100号7楼之1;萧锡清 台北市中正区罗斯福路2段100号7楼之1
主权项
地址
日本
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