| 摘要 |
PURPOSE: An array substrate and a manufacturing method thereof are provided to reduce a number of mask processes. CONSTITUTION: A first metal layer (104) is arranged on a substrate. A gate insulation material layer (110) and a semiconductor oxide material layer (118) are laminated on the substrate. The substrate is thermally treated at 300-500°C. The semiconductor oxide material layer, the gate insulation material layer, and the first metal layer are patterned to form a gate insulation film and a semiconductor oxide layer. [Reference numerals] (AA) Thermal treatment process(300°C-500°C) |
