METHOD FOR GROWING SINGLE CRYSTAL

摘要

The present invention relates to a method for growing a single crystal including a shouldering process which allows horizontal and vertical growth to a target diameter simultaneously. Disclosed is the method for growing the single crystal to grow the diameter (Db) of a shouldering part to satisfy 0.1<Db/Da<0.4 at 1/2 position of the length of the shouldering part in the shouldering process. Here, Da is the diameter of the body of the single crystal, and Db is the diameter of the shouldering part at 1/2 position (H/2) of the length (H) of the shouldering part. The said method is to minimize defects in a shoulder formation process for single crystal growth, thereby improving the quality of the single crystal.