WAFER PROCESSING LAMINATE, WAFER PROCESSING MEMBER, TEMPORARY BONDING ARRANGEMENT, AND THIN WAFER MANUFACTURING METHOD

摘要

The present invention relates to a wafer processing laminate which is formed by forming a temporary bonding layer (2) on a supporter (3), forming a circuit on the surface of the temporary bonding layer (2), and laminating a wafer (1) to process the rear thereof and provides the wafer processing laminate which includes the temporary bonding layer (2) with a three-layered structure which is composed of a first temporary bonding layer which is composed of a thermoplastic siloxane bond-free polymer layer (A) which is detachably bonded on the surface of the wafer, a second temporary bonding layer which is composed of a thermoplastic siloxane polymer layer (B) which is detachably bonded on the supporter, and a third temporary bonding layer which is composed of a thermoplastic modified siloxane polymer layer (C) which is detachably bonded in contact with the (B) layer. The temporary bonding layer according to the present invention is applied to a wide semiconductor film forming process by high heat resistance. A bonding layer with high film thickness uniformity is formed on the wafer with a step. A thin wafer with the high film thickness uniformity is obtained.