SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form a first transistor which is required to have less leak current and a second transistor which is required to be faster and consume less power, on a same substrate, and to allow these two kinds of transistors to exhibit sufficient performance respectively.SOLUTION: A first transistor TR1 is required to have less leak current. A second transistor TR2 is required to consume less power and operate at a high speed. An upper surface of the portion where a second diffusion layer SD2 is formed in a substrate SUB is lower than an upper surface of the portion where a first diffusion layer SD1 is formed in the substrate SUB.