发明名称 |
CORNER TRANSISTOR SUPPRESSION |
摘要 |
The threshold voltage of parasitic transistors formed at corners of shallow trench isolation regions is increased and mobility decreased by employing a high-K dielectric material. Embodiments include STI regions comprising a liner of a high-K dielectric material extending proximate trench corners. Embodiments also include STI regions having a recess formed in the trench, wherein the recess contains a high-K dielectric material, in the form of a layer or spacer, extending proximate trench corners.
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申请公布号 |
US2013288452(A1) |
申请公布日期 |
2013.10.31 |
申请号 |
US201313927588 |
申请日期 |
2013.06.26 |
申请人 |
GLOBALFOUNDRIES SINGAPORE PTE., LTD. |
发明人 |
TAN SHYUE SENG;LEUNG YING KEUNG;QUEK ELGIN |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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