| 摘要 |
<p>A method of making a NAND string includes forming a semiconductor layer over a major surface of a substrate, patterning the semiconductor layer into an elongated nanowire shaped channel extending substantially parallel to the major surface of the substrate, forming a tunneling dielectric layer over the channel, forming a plurality of charge storage regions over the tunneling dielectric layer and undercutting the channel using the plurality of charge storage regions as mask. The channel has a narrower width than each charge storage region width, and an overhanging portion of each of the plurality of charge storage regions overhangs the channel. The method also includes forming a blocking dielectric layer over the plurality of charge storage regions, such that the blocking dielectric layer fills a space below the overhanging portion of each of the plurality of charge storage regions and forming a plurality of control gates over the blocking dielectric layer.</p> |
