| 摘要 |
PROBLEM TO BE SOLVED: To suppress catastrophic optical damage (COD) and rapid reduction in optical output in a semiconductor laser device.SOLUTION: The semiconductor laser device includes a semiconductor laser element 100A and a supporting member 200. The semiconductor laser element 100A sequentially includes a first electrode 13, a substrate 11, a semiconductor structure 12 having an emission surface and a reflection surface, a second electrode 15, and a pad 16. The semiconductor laser element 100A is connected to the supporting member 200 on the pad 16 side via a connection member 300. An emission-side end portion of the second electrode 15 is spaced apart from the emission surface of the semiconductor structure 12, and an emission-side end portion of the pad 16 is located closer to an external side than to the emission-side end portion of the second electrode 15. |
