| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal chloride gas generator, a hydride vapor growth device, and a method of manufacturing a nitride semiconductor template, in which mixing of unintended impurity in the nitride semiconductor template is suppressed.SOLUTION: An HVPE device 1 includes a reactive furnace 2 which contains a Ga tank 7 housing Ga solution 7a and an Al tank 8 housing Al pellet 8a at a raw material part 3a on an upper stream side while contains a growth part 3b at which a sapphire substrate 11 for growth is arranged on a lower stream side, a raw material part heater 4a and a growth part heater 4b for heating the interior of the reactive furnace 2, an upper stream side end part 65 containing a gas guiding-in opening 65a, and a gas guiding-in pipe 60 which is arranged to run from the upper stream side end part 65 to the growth part 3b by way of the tanks 7 and 8 as a metal housing part, to introduce chloride gas from the upper stream side end part 65 and supply it to the tanks 7 and 8, and then supplies metal chloride gas generated by reaction between the chloride gas and the metal in the housing part to the growth part 3b. The gas guiding-in pipe 60 contains an opaque part 60b which suppresses a lightguide phenomenon that waveguides radiation heat from the growth part heater 4b or the growth part 3b. |
