| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide deposition apparatus and deposition method in which throughput can be improved by minimizing the time from completion of a deposition process to start of the next deposition process.SOLUTION: A silicon carbide deposition apparatus comprises a deposition chamber in which a reaction gas is supplied and a deposition process is performed, a temperature measuring section which measures a temperature inside of the deposition chamber, a plurality of heaters disposed within the deposition chamber, an output control section which independently controls output from each of the heaters, and a substrate conveyance section which conveys a substrate into and out of the deposition chamber. When the deposition process to the substrate is completed, the output control section turns off or decreases output from at least one of the plurality of heaters and, when the temperature measured by the temperature measuring section becomes such a temperature that the substrate conveyance section is operable within the deposition chamber, turns off or increases output from the at least one heater the output of which has been turned off or decreased. The substrate on which the deposition process has been performed is conveyed out of the deposition chamber by the substrate conveyance section. |
