发明名称 PHOTORESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
摘要 PROBLEM TO BE SOLVED: To provide a photoresist composition excellent in CDU (critical dimension uniformity), LWR (line width roughness) performance and cross-sectional shape rectangularity.SOLUTION: The photoresist composition includes: [A] a polymer having a specified acrylic structural unit having a (5-oxo-4-oxatricyclo[4.3.1.1]undecane structure in a side chain; and [B] an acid generator.
申请公布号 JP2013225094(A) 申请公布日期 2013.10.31
申请号 JP20120219897 申请日期 2012.10.01
申请人 JSR CORP 发明人 MIYATA HIROMU;NAKAJIMA HIROMITSU;YOSHIDA MASASHI;KASAHARA KAZUKI
分类号 G03F7/039;C08F20/28;G03F7/004;H01L21/027 主分类号 G03F7/039
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