发明名称 |
METHOD FOR HETEROEPITAXIAL GROWTH OF III METAL-FACE POLARITY III-NITRIDES ON SUBSTRATES WITH DIAMOND CRYSTAL STRUCTURE AND III-NITRIDE SEMICONDUCTORS |
摘要 |
<p>The present invention discloses a method of heteroepitaxial growth enabling the successful growth of thin films of GaN and III-nitride semiconductor heterostructures of (0001) orientation with III metal-face polarity on diamond substrates being either polycrystalline or single crystal with various crystallographic orientations. The method uses a thin AlN nucleation layer on the diamond substrate with thickness equal or less than 5 nm, grown by Molecular Beam Epitaxy (MBE) using a nitrogen plasma source. The invention enables the development of very high power metal-face III-nitride devices, such as High Electron Mobility Transistors, on single crystal or polycrystalline diamond substrates. The method is also applicable for other element IV substrates with diamond crystal structure.</p> |
申请公布号 |
WO2013160383(A1) |
申请公布日期 |
2013.10.31 |
申请号 |
WO2013EP58560 |
申请日期 |
2013.04.24 |
申请人 |
FOUNDATION FOR RESEARCH AND TECHNOLOGY |
发明人 |
GEORGAKILAS, ALEXANDROS;ARETOULI, KLEOPATRA;TSAGARAKI, KATERINA |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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