| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device that hardly causes degradation and to provide a method of manufacturing the same.SOLUTION: A nonvolatile semiconductor memory device is a semiconductor memory device that includes a cell array layer having first wiring, a memory cell stacked on the first wiring, and second wiring formed on the memory cell so as to cross the first wiring. The memory cell has a current rectifying element and a variable resistance element. In a side wall of the current rectifying element, a portion having an atomic composition ratio of nitrogen higher than that of oxygen exists. |
