| 摘要 |
<p>The present invention is a highly reliable nitride semiconductor element having a high withstand voltage when being operated. The nitride semiconductor element has a substrate region partially removed therefrom, said region corresponding to a region between a cathode electrode and an anode electrode, and the nitride semiconductor element has a p-type semiconductor embedded in the removed area, said p-type semiconductor having high heat conductivity. Diamond and WBG oxide semiconductor are used as the p-type semiconductor. The p-type semiconductor preferably has a band gap equal to or more than that of GaN (∆Eg=3 to 4 eV) to be more effective.</p> |
