发明名称 |
Exposure Device, Exposure Method and Method of Manufacturing Semiconductor Device |
摘要 |
The present invention provides a highly controllable device for exposure from the back side and an exposure method, and also provides a method of manufacturing a semiconductor device using the same. The present invention involves exposure with the use of the back side exposure device of which a reflecting means is disposed on the front side of a substrate, apart from a photosensitive thin film surface by a distance X (X=0.1 mum to 1000 mum), and formation of a photosensitive thin film pattern in a self alignment manner, with good controllability, at a position a distance Y away from the end of a pattern. The invention fabricates a TFT using that method.
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申请公布号 |
US2013286372(A1) |
申请公布日期 |
2013.10.31 |
申请号 |
US201313930487 |
申请日期 |
2013.06.28 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ADACHI HIROKI |
分类号 |
G03B27/16;G03B27/00;G03F7/00;G09G3/32;H01L21/336;H01L21/77;H01L21/84;H01L27/12 |
主分类号 |
G03B27/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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