发明名称 Semiconductor Device
摘要 An object is to achieve low power consumption and a long lifetime of a semiconductor device having a wireless communication function. The object can be achieved in such a manner that a battery serving as a power supply source and a specific circuit are electrically connected to each other through a transistor in which a channel formation region is formed using an oxide semiconductor. The hydrogen concentration of the oxide semiconductor is lower than or equal to 5×1019 (atoms/cm3). Therefore, leakage current of the transistor can be reduced. As a result, power consumption of the semiconductor device in a standby state can be reduced. Further, the semiconductor device can have a long lifetime.
申请公布号 US2013288619(A1) 申请公布日期 2013.10.31
申请号 US201313916666 申请日期 2013.06.13
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KATO KIYOSHI;KOYAMA JUN
分类号 H04B1/40 主分类号 H04B1/40
代理机构 代理人
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