发明名称 |
METHOD OF MANUFACTURING LAMINATED WAFER BY HIGH TEMPERATURE LAMINATING METHOD |
摘要 |
A method of manufacturing a laminated wafer is provided by forming a silicon film layer on a surface of an insulating substrate comprising the steps in the following order of: applying a surface activation treatment to both a surface of a silicon wafer or a silicon wafer to which an oxide film is layered and a surface of the insulating substrate followed by laminating in an atmosphere of temperature exceeding 50° C. and lower than 300° C., applying a heat treatment to a laminated wafer at a temperature of 200° C. to 350° C., and thinning the silicon wafer by a combination of grinding, etching and polishing to form a silicon film layer.
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申请公布号 |
US2013288453(A1) |
申请公布日期 |
2013.10.31 |
申请号 |
US201313930705 |
申请日期 |
2013.06.28 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
AKIYAMA SHOJI;KUBOTA YOSHIHIRO;ITO ATSUO;KAWAI MAKOTO;TANAKA KOUICHI;TOBISAKA YUJI;NOJIMA YOSHIHIRO |
分类号 |
H01L21/84 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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