| 摘要 |
<p>EXEMPLARY EMBODIMENTS PROVIDE SEMICONDUCTOR DEVICES INCLUDING HIGH-QUALITY (I.E., DEFECT FREE) GROUP III-N NANOWIRES AND UNIFORM GROUP III-N NANOWIRE ARRAYS AS WELL AS THEIR SCALABLE PROCESSES FOR MANUFACTURING, WHERE THE POSITION, ORIENTATION, CROSS-SECTIONAL FEATURES, LENGTH AND THE CRYSTALLINITY OF EACH NANOWIRE CAN BE PRECISELY CONTROLLED. A PULSED GROWTH MODE CAN BE USED TO FABRICATE THE DISCLOSED GROUP III-N NANOWIRES AND/OR NANOWIRE ARRAYS PROVIDING A UNIFORM LENGTH OF ABOUT 10 NM TO ABOUT 1000 MICRONS WITH CONSTANT CROSS-SECTIONAL FEATURES INCLUDING AN EXEMPLARY DIAMETER OF ABOUT 10-1000 NM. IN ADDITION, HIGH-QUALITY GaN SUBSTRATE STRUCTURES CAN BE FORMED BY COALESCING THE PLURALITY OF GaN NANOWIRES AND/OR NANOWIRE ARRAYS TO FACILITATE THE FABRICATION OF VISIBLE LEDs AND LASERS. FURTHERMORE, CORE-SHELL NANOWIRE/MQW ACTIVE STRUCTURES CAN BE FORMED BY A CORE-SHELL GROWTH ON THE NONPOLAR SIDEWALLS OF EACH NANOWIRE AND CAN BE CONFIGURED IN NANOSCALE PHOTOELECTRONIC DEVICES SUCH AS NANOWIRE LEDs AND/OR NANOWIRE LASERS TO PROVIDE TREMENDOUSLY-HIGH EFFICIENCIES.</p> |
