发明名称 |
Thin Film with Reduced Stress Anisotropy |
摘要 |
An apparatus and associated method may provide a magnetic element can have a thin film deposited on a cryogenic substrate. The thin film can additionally be stress tuned ,during primary annealing to reduce unwanted stress anisotropy. The thin film can be configured to have near zero internal stress after the primary annealing.
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申请公布号 |
US2013288078(A1) |
申请公布日期 |
2013.10.31 |
申请号 |
US201213460290 |
申请日期 |
2012.04.30 |
申请人 |
ZHU MENG;ESTRINE ELIOT LEWIS CUTHBERT;TIAN WEI;INTURI VENKATESWARA;KAUTZKY MICHAEL C.;SEAGATE TECHNOLOGY LLC |
发明人 |
ZHU MENG;ESTRINE ELIOT LEWIS CUTHBERT;TIAN WEI;INTURI VENKATESWARA;KAUTZKY MICHAEL C. |
分类号 |
G11B5/66;B05D1/38;B05D3/00;B05D3/02;G11B5/735 |
主分类号 |
G11B5/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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