发明名称 METHOD FOR MAKING EPITAXIAL STRUCTURE
摘要 A method for making epitaxial structure is provided. The method includes providing a substrate having an epitaxial growth surface, growing a buffer layer on the epitaxial growth surface; placing a graphene layer on the buffer layer; epitaxially growing an epitaxial layer on the buffer layer; and removing the substrate. The graphene layer includes a number of apertures to expose a part of the buffer layer. The epitaxial layer is grown from the exposed part of the buffer layer and through the apertures.
申请公布号 US2013288458(A1) 申请公布日期 2013.10.31
申请号 US201213676033 申请日期 2012.11.13
申请人 WEI YANG;FAN SHOU-SHAN 发明人 WEI YANG;FAN SHOU-SHAN
分类号 H01L21/20 主分类号 H01L21/20
代理机构 代理人
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