| 摘要 |
PROBLEM TO BE SOLVED: To enable easy manufacturing of a spin element having a depletion gate.SOLUTION: The spin element includes: a hole 116 formed on a substrate 101 closer to the source electrode 114 side than an opposite region 113, and reaching a portion of a first semiconductor layer 102 between the opposite region 113 and the source electrode 114; a first depletion gate electrode 117 formed on a fourth semiconductor layer 110 closer to the drain electrode 115 side than the opposite region 113, to form a depletion layer in a portion of a second quantum well layer 107 between the opposite region 113 and the source electrode 114; and a second depletion gate electrode 118 formed in contact to the first semiconductor layer 102 at the bottom of the hole 116, to form a depletion layer in a first quantum well layer 105. |
