发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce a difference in current flowing through each of a plurality of free wheel diodes (FWD) which are connected to each semiconductor switching element.SOLUTION: A power module 2 comprises IGBT1-IGBT6, FWD11-FWD62 and R11-R62. The IGBT1-IGBT6 each includes a gate terminal, an emitter terminal and a collector terminal. Every two of the FWD11-FWD62 are connected in parallel to the IGBT1-IGBT6, respectively. Two FWDs are provided for each of the IGBT1-IGBT6, and one FWD12 among the two FWDs has a lower forward current with respect to the same forward voltage than a forward current of the other FWD11. Electric resistance in a circuit which connects the FWD11 with the IGBT1 is higher than electric resistance in a circuit which connects the FWD12 with the IGBT1.
申请公布号 JP2013225590(A) 申请公布日期 2013.10.31
申请号 JP20120096944 申请日期 2012.04.20
申请人 MITSUBISHI ELECTRIC CORP 发明人 OUMARU TAKESHI
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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