| 发明名称 |
ELECTROCHEMICAL ETCHING OF SEMICONDUCTORS |
| 摘要 |
Semiconductors are electrochemically etched in solutions containing sources of bifluoride and nickel ions. The electrochemical etching may form pores in the surface of the semiconductor in the nanometer range. The etched semiconductor is then nickel plated.
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| 申请公布号 |
US2013288476(A1) |
申请公布日期 |
2013.10.31 |
| 申请号 |
US201313924547 |
申请日期 |
2013.06.22 |
| 申请人 |
ROHN AND HAAS ELECTRONIC MATERIALS LLC |
发明人 |
HAMM GARY;REESE JASON A.;ALLARDYCE GEORGE R. |
| 分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
| 代理机构 |
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