| 摘要 |
Provided is a substrate treating apparatus. The substrate treating apparatus includes a process chamber providing an inner space in which a substrate is treated, a substrate support member disposed within the process chamber to support the substrate, a showerhead disposed to face the substrate support member and partitioning the inner space into an upper space and a lower space, the showerhead having a plasma supply hole through which the upper space and the lower space communicate with each other, an excitation gas supply unit supplying an excitation gas into the upper space, a process gas supply unit supplying a process gas into the lower space, and a microwave apply unit applying a microwave into the upper space.
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