SEMICONDUCTOR NON-DESTRUCTIVE INSPECTION DEVICE AND SEMICONDUCTOR NON-DESTRUCTIVE INSPECTION METHOD

摘要

[Problem] To provide a semiconductor non-destructive inspection device and a semiconductor non-destructive inspection method which are capable of acquiring, from a laminated structure such as a semiconductor wafer including a semiconductor layer, electronic physical property information of each layer of the laminated structure and electronic physical property information of each interlayer interface thereof. [Solution] A semiconductor non-destructive inspection device (1) comprises: a means for dividing pulse laser light (9) into probe light (L1) and pump light (L2); a means for irradiating a semiconductor wafer (5) with the pump light (L2) to thereby emit an electromagnetic wave (10) from an irradiation position; a lock-in amplifier (28) for detecting the amplitude intensity of the electromagnetic wave (10) via a detection element (19) and converting the amplitude intensity into a time-series waveform corresponding to the temporal waveform of the amplitude intensity of the electromagnetic wave (10); a time delay means (15) for periodically delaying the time at which the amplitude intensity is detected by the detection element (19); and a physical property information acquisition means for acquiring electronic physical property information of each layer of a laminated structure and electronic physical property information of each interlayer interface thereof by comparing the time-series waveform and the time-series waveform of each single-layer structure of a laminated structure previously prepared as reference data.