| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a dielectric film containing silicon.SOLUTION: A method for forming a dielectric film containing silicon, such as, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that exhibit at least one of the following characteristics: low wet etch resistance, a dielectric constant of 6.0 or below, and/or resistance against a high-temperature rapid thermal anneal processing. Also, a method for forming dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer is disclosed. |
