发明名称 MASK BLANK, TRANSFER MASK AND MANUFACTURING METHOD FOR MASK BLANK AND TRANSFER MASK
摘要 PROBLEM TO BE SOLVED: To provide a mask blank and a manufacturing method of the mask blank that maintain a post-heat treated and post-forced cooling treated in-plane uniformity of transmission within a predetermined allowable range.SOLUTION: The mask blank includes a thin film for formation of a transfer pattern on a principal surface of a translucent substrate, and the thin film is composed of a material consisting of silicon and nitrogen, or a material containing the silicon and the nitrogen and one or more elements selected from a metalloid element, a non-metallic element and rare gas. The thin film has an oxide layer with a more content of oxygen in a surface layer in contrast to the thin film in an area excluding the surface layer, and the thin film has a center part formed thicker than a thickness of an outer periphery on a principal surface side. The oxide layer has a center part formed thicker than the thickness of the outer periphery on the principal surface side.
申请公布号 JP2013225139(A) 申请公布日期 2013.10.31
申请号 JP20130116620 申请日期 2013.06.03
申请人 HOYA CORP 发明人 SUZUKI TOSHIYUKI;ISHIHARA SHIGENORI
分类号 G03F1/32 主分类号 G03F1/32
代理机构 代理人
主权项
地址