| 发明名称 |
NONVOLATILE MEMORY CELL OPERATING BY INCREASING ORDER IN POLYCRYSTALLINE SEMICONDUCTOR MATERIAL |
| 摘要 |
A memory cell is provided that includes a first conductor, a second conductor, and a semiconductor junction diode between the first and second conductors. The semiconductor junction diode is not in contact with a material having a lattice mismatch of less than 12 percent with the semiconductor junction diode. Numerous other aspects are provided.
|
| 申请公布号 |
US2013286728(A1) |
申请公布日期 |
2013.10.31 |
| 申请号 |
US201313925917 |
申请日期 |
2013.06.25 |
| 申请人 |
SANDISK 3D LLC |
发明人 |
HERNER SCOTT BRAD;BANDYOPADHYAY ABHIJIT |
| 分类号 |
G11C11/36;G11C7/00;G11C11/39;G11C17/06;G11C17/16;G11C29/00;H01L21/336;H01L21/82;H01L27/24;H01L29/73;H01L45/00 |
主分类号 |
G11C11/36 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
