发明名称 |
DEVICE STRUCTURES COMPATIBLE WITH FIN-TYPE FIELD-EFFECT TRANSISTOR TECHNOLOGIES |
摘要 |
Device structures, design structures, and fabrication methods for fin-type field-effect transistor integrated circuit technologies. First and second fins, which constitute electrodes of the device structure, are each comprised of a first semiconductor material. The second fin is formed adjacent to the first fin to define a gap separating the first and second fins. Positioned in the gap is a layer comprised of a second semiconductor material. |
申请公布号 |
US2013285211(A1) |
申请公布日期 |
2013.10.31 |
申请号 |
US201213455732 |
申请日期 |
2012.04.25 |
申请人 |
GAUTHIER, JR. ROBERT J.;JOHNSON JEFFREY B.;LI JUNJUN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GAUTHIER, JR. ROBERT J.;JOHNSON JEFFREY B.;LI JUNJUN |
分类号 |
H01L29/00;G06F17/50;H01L21/20 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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