发明名称 Phase Change Memory Cells And Methods Of Forming Phase Change Memory Cells
摘要 A phase change memory cell has first and second electrodes having phase change material there-between. The phase change memory cell is devoid of heater material as part of either of the first and second electrodes and being devoid of heater material between either of the first and second electrodes and the phase change material. A method of forming a memory cell having first and second electrodes having phase change material there-between includes lining elevationally inner sidewalls of an opening with conductive material to comprise the first electrode of the memory cell. Elevationally outer sidewalls of the opening are lined with dielectric material. Phase change material is formed in the opening laterally inward of and electrically coupled to the conductive material in the opening. Conductive second electrode material is formed that is electrically coupled to the phase change material. Other implementations are disclosed.
申请公布号 US2013285002(A1) 申请公布日期 2013.10.31
申请号 US201213460302 申请日期 2012.04.30
申请人 VAN GERPEN DAMON E.;BEZ ROBERTO;MICRON TECHNOLOGY, INC. 发明人 VAN GERPEN DAMON E.;BEZ ROBERTO
分类号 H01L47/00;H01L45/00 主分类号 H01L47/00
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