| 摘要 |
Provided is a transistor element wherein a laminated structure is provided in which a base electrode in the form of a sheet is arranged between an emitter electrode and a collector electrode and at least one p-type organic semiconductor layer is provided respectively on the upper and lower face of this base electrode and, in addition, current passage promotion layers are respectively formed between these p-type organic semiconductor layers and the base electrode. In this way, a transistor element (MBOT) can be provided which can, in particular, be provided in a stable fashion by a simple manufacturing process and which is of a construction that can be mass-produced, and which, furthermore, provides a large current modulation effect and excellent ON/OFF ratio at low voltage, between the emitter electrode and the collector electrode. |
