发明名称 NARROW SOURCE FOR PHYSICAL VAPOR DEPOSITION PROCESSING
摘要 A narrow sputtering source and target which are designed to be installed in a series on a sputtering chamber. Each of the narrow sputtering source has length sufficient to traverse one direction of the sputtering zone, but is much narrower than the orthogonal direction of the sputtering zone. When the sputtering chamber performs a pass-by sputtering process, each of the narrow sputtering sources is sufficiently long to traverse the sputtering zone in the direction orthogonal to the substrate travel direction, but is much narrower than the sputtering zone in the direction of substrate travel. Several narrow sputtering sources are installed so as to traverse the entire sputtering zone in all directions.
申请公布号 US2013284594(A1) 申请公布日期 2013.10.31
申请号 US201313871936 申请日期 2013.04.26
申请人 INTEVAC, INC. 发明人 BLUCK TERRY;RIPOSAN ALEX
分类号 C23C14/34 主分类号 C23C14/34
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