TWIN-WELL LATERAL SILICON CONTROLLED RECTIFIER

摘要

A LSCR includes a substrate having a semiconductor surface which is p-doped. A first nwell and a second nwell spaced apart from one another are in the semiconductor surface by a lateral spacing distance. A first n+ diffusion region and a first p+ diffusion region are in the first nwell. A second n+ diffusion region is in the second nwell. A second p+ diffusion is between the first nwell and second nwell which provides a contact to the semiconductor surface. Dielectric isolation is between the first n+ diffusion region and first p+ diffusion region, along a periphery between the first nwell and the semiconductor surface, and along a periphery between the second nwell and the semiconductor surface. A resistor provides coupling between the second n+ diffusion region and second p+ diffusion.